2004. 1. 29 1/4 semiconductor technical data KTN2907AE epitaxial planar pnp transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =-50na(max.) ; v ce =-30v, v eb =-0.5v. low saturation voltage : v ce(sat) =-0.4v(max.) ; i c =-150ma, i b =-15ma. complementary to the ktn2222ae. dim millimeters a b d e esm 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 c g h j 1 3 2 e b d a g h c j 1. emitter 2. base 3. collector + _ + _ + _ + _ + _ + _ maximum rating (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current i c -600 ma collector power dissipation (ta=25 ) p c 100 mw junction temperature t j 150 storage temperature range t stg -55 150 marking z h
2004. 1. 29 2/4 KTN2907AE revision no : 0 * pulse test : pulse width 300 s, duty cycle 2%. electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =-30v, v eb =-0.5v - - -50 na collector cut-off current i cbo v cb =-50v, i e =0 - - -10 na collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -60 - - v collector-emitter breakdown voltage * v (br)ceo i c =-10ma, i b =0 -60 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v dc current gain * h fe (1) i c =-0.1ma, v ce =-10v 75 - - h fe (2) i c =-1.0ma, v ce =-10v 100 - - h fe (3) i c =-10ma, v ce =-10v 100 - - h fe (4) i c =-150ma, v ce =-10v 100 - 300 h fe (5) i c =-500ma, v ce =-10v 50 - - collector-emitter saturation voltage * v ce(sat) 1 i c =-150ma, i b =-15ma - - -0.4 v v ce(sat) 2 i c =-500ma, i b =-50ma - - -1.6 base-emitter saturation voltage * v be(sat) 1 i c =-150ma, i b =-15ma - - -1.3 v v be(sat) 2 i c =-500ma, i b =-50ma - - -2.6 transition frequency f t v ce =-20v, i c =-50ma, f=100mhz 200 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 8 pf input capacitance c ib v be =-2v, i c =0, f=1.0mhz - - 30 pf switching time delay time t d v cc =-30v, i c =-150ma i b1 =-15ma - - 10 ns rise time t r - - 40 storage time t stg v cc =-6v, i c =-150ma i b1 =-i b2 =-15ma - - 80 fall time t f - - 30
2004. 1. 29 3/4 KTN2907AE revision no : 0 c collector current i (ma) 10 dc current gain h fe -1 -0.5 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v h - i transition frequency f (mhz) collector current i (ma) c t f - i -0.4 -0.8 -1.2 -1.6 -200 -400 -600 -800 fe c 30 50 100 300 500 1k v =-10v ce t c 10 1 100 10 100 1k 3k ta=25 c v =10v 1000 ce common emitter ta=25 c -1.8 -1000 i =-5ma b i =-10ma b i =-20ma b i =-30ma b i =-40ma b -3 -10 -30 -100 -300 -1k ta=-25 c ta=25 c ta=75 c -100 -0.5 -1 -1.0 -0.8 -0.6 -0.4 -0.2 collector-emitter saturation ce(sat) -10 -3 -30 v - i ce(sat) c -1k -300 i /i =10 c voltage v (v) 0 collector current i (ma) c v ce(sat) common emitter b base-emitter saturation voltage v (v) collector current i (ma) -3 -0.2 -0.5 be(sat) -1 0 -10 -30 -100 c -1 k -300 -0.4 i /i =10 common emitter v - i be(sat) cb c -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 v be(sat) ta=-25 c ta=25 c ta=75 c collector current i (ma) -0.2 -0.05 base-emitter voltage v (v) be c -0.3 -0.4 -0.5 -0.6 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -500 -0.7 -0.8 -0.9 -1.0 i - v cbe ta=75 c t a=25 c ta=-25 c common emitter v =-10v ce
2004. 1. 29 4/4 KTN2907AE revision no : 0 0 collector power dissipation c 25 0 ambient temperature ta ( c) p - ta collector output capacitance cob (pf) collector-base voltage v (v) cb cob - v c 50 100 150 cb 1.0 -0.1 10 -1.0 -10 -100 -300 common emitter ta=25 c 100 50 75 100 125 150 175 emitter-base voltage v (v) eb collector input capacitance cib (pf) 3.0 30 cib cob f=1mhz, p (mw) eb cib - v 200
|
